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Prof.HONG Chaosheng

Update time:2018-12-20

 

Prof. HONG Chaosheng

1920-2018 

Education:

1940 B.S. in Enginnering, Tsinghua University (Southwest United University) 

1948 Ph.D. in Physics, Massachusetts Institute of Technology 

1950 Postdoctor in Physics, Purdue University  

Professional Experience: 

1941 Assistant Professor, Southwest United University

1950 Research Assistant, Leiden University 

1951 Associate Professor, Institute of Physic 

1952 Part-time Professor, Tsinghua University & Peking University 

1953 Established the first Cryophysics Lab in China 

1954 Professor, Institute of Physics 

1958 Part-time Professor, University of Science and Technology of China 

1978 Deputy Director, Institute of Physics 

1980 Academician, Chinese Academy of Sciences 

Honors and Awards: 

1989  1st Huguangfu Award

2000  Mendelson Award

2011  Samuel Collins Prize 

Research Interests:

- Cryogenic Physics;

- Superconducting Materials;

- Superfluid Helium;

- Discovered exception of the Hall Effect in 1950;

- Proposed the new concept that impurities available in the forbidden band of semiconductors contribute to electrical conductivity

- Observed the 4He λ Transition Point Temperature.

Selected Recent Publications:

1. Hung C S, Gliessman J R. 1950. The resistivity and hall effect of germanium at low temper peratures. Phys Rev (Lett), 79: 726. 

2. Hung C S. 1950. Theory of resistivity and hall Effect at very low temperatures. Phys Rev (Lett), 79: 727.  

3. Hung C S, Johnson V A. 1950. Resistivity of semiconductors containing both acceptors and donors,Phys Rev ( Lett), 79: 535 

4. Hung C S. 1950. Thermionic emission from oxide cathodes: retarding and accelerating fields. J Appl Phys, 21(1): 37. 

5. Hung C S, Baum R M. 1952. Activation energy of heat treatment introduced lattice defects in germanium. Phys Rev, 88(1): 134. 

6. Hung C S, Hunt B, Winkel P. 1952. Transport phenomena of liquid helium II in narrow slits. Physica, 18 (8/9): 629. 

7. Hung C S, Gliessman J R. 1954. Resistivity and hall effect of germanium at low temperatures. Phys Rev, 96: 1226. 

8. Hung C S,1980. Cryogenics in China. Prpc. of ICEC 8, edited by C. Rizzuto, Plenary talk, 881 

9. Hong C S, Lin P, Mao Y Z, Yue Y, Zhang Q G, 1990. Study of the realization of 4He λ Transition Point Temperature by Means of a Small Sealed Cell, Proc. of ICEC13, 432 

10.Song N H, Hong C S, Mao Y Z, Lin P, Zhang Q G, Zhang L. 1991.Realization of the Lambda Transition Temperature of Liquid 4He, Cryogenics, 31:87 

11.Hong C S, Xu X D. 1993. On the Unique Features of the Low Temperature Regenerator in a 4.2k G-M Refrigerator, Proc. of 4th Joint Sino-Japanese Seminar on Cryocoolers and Concerned Topics, Oct. 19-23, 1993, Beijing, China, 6 

12.Li L F, Hong C S, Li Y Y, Zhang Z. 1996. Martensitic Transformation in ZrO2-CeO2 System at Cryogenic Temperatures. Cryogenics, 36:7. 

13.Hong C S. 2000. Cryogenics for China Tomorrow. Proc. of ICEC 18, Mumbai, India, 59 

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