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Shi Wensheng

Update time:2018-12-25

Name:    Shi Wensheng
E-mail:  shiws@mail.ipc.ac.cn


Resume:
In 1997, he obtained a doctorate degree in electronic materials and components of Xi'an Jiaotong University. In the same year, he entered the Institute of Physics of the Chinese Academy of Sciences for post-doctoral research. In 1999, he joined the Super Diamond and Advanced Film Research Center of City University of Hong Kong to study the preparation, characterization and optical properties of one-dimensional nanostructures. Two years later, as a STA Fellow, he was engaged in the research of zinc oxide thin films and the preparation and application of inorganic ultrafine nano phosphors at the National Institute of Industrial Technology of Japan. In 2003, he joined the Department of Chemistry of the University of North Carolina at Chapel Hill, where he was engaged in the preparation and application of one-dimensional semiconductor nanostructures. In March 2005, he was hired as a researcher and doctoral tutor by the Institute of Physics and Chemistry of the Chinese Academy of Sciences. He was selected into the “Hundred Talents Program” of CAS, and in 2006 he received the selected support of “Hundred Talents Program” for the excellent. After returning to China, he received support from Ministry of Education and the Ministry of Personnel's Returned Overseas Chinese Fund respectively, and undertook the “863” project, the National Nano Major Research Program, and the National Science Fund for Outstangding Young Scholars. In recent years, more than 60 papers of him have been published in SCI in Nano Letters, J Am Chem Soc, Adv Mater, Angew Chem In Ed, Appl Phys Lett, etc., and have been cited more than 2,000 times by others. He has applied for 30 Chinese invention patents, 2 Japanese patents, and 2 international patents.

Research Field:
Controlled growth and performance control of one-dimensional semiconductor nanostructures: electron transport in one-dimensional semiconductor nanostructures; one-dimensional semiconductor nanostructures with desired structure, size, and optoelectronic properties controlled by doping and surface conditioning; Possible applications of one-dimensional semiconductor nanostructures on nanoelectronic devices.
New sensor and sensing mechanism based on one-dimensional nanostructure: new phenomena and new effects of one-dimensional nanostructures in chemical and biological sensing applications; research on new sensing mechanisms and new sensors.
Clean energy devices based on one-dimensional nanostructures: Studying the charge transport characteristics of one-dimensional nanostructured solar cells, prepare high-efficiency new solar cells by using one-dimensional nanostructures; developing high-efficiency photocatalytic materials and methods based on one-dimensional nanostructures.

Publications:
1. Wang XT, Shi WS*, She GW, and Mu LX, Using Si and Ge Nanostructures as Substrates for Surface-Enhanced Raman Scattering Based on Photoinduced Charge Transfer Mechanism, Journal of the American Chemical Society, 2011, 133, 16518–16523

2. Mu LX, Shi WS*, She GW, Chang JC, Lee ST, Fluorescent Logic Gates Chemically Attached to Silicon Nanowires, Angewandte Chemie International Edition, 2009, 48, 3469-3472.

3. Mu LX, Shi WS,* Chang JC, Lee ST, Silicon nanowires-based huorescence sensor for Cu(II), Nano Letters, 2008, 8 (1), 104-109.

4. Shi WS, Peng HY, Wang N, Li CP, Xu L, Lee CS, Kalish R, Lee ST, Free-standing single crystal silicon nanoribbons, Journal of the American Chemical Society, 2001, 123(44), 11095-11096.

5. Shi WS, Zheng YF, Wang N, Lee CS, Lee ST, A general synthetic route to III-V compound semiconductor nanowires, Advanced Materials, 2001, 13(8), 591-594.

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